Download Advanced Gate Stacks for High-Mobility Semiconductors by S. Takagi (auth.), Dr. Athanasios Dimoulas, Evgeni Gusev, PDF

By S. Takagi (auth.), Dr. Athanasios Dimoulas, Evgeni Gusev, Professor Paul C. McIntyre, Professor Marc Heyns (eds.)

Will nanoelectronic units proceed to scale based on Moore’s legislations? At this second, there's no effortless resolution considering the fact that gate scaling is swiftly rising as a significant roadblock for the evolution of CMOS know-how. Channel engineering in keeping with high-mobility semiconductor fabrics (e.g. strained Si, substitute orientation substrates, Ge or III-V compounds) might support triumph over the hindrances due to the fact that they give functionality enhancement. There are numerous matters even though. can we understand how to make complicated engineered substrates (e.g. Germanium-on-Insulator)? that are the simplest interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? do we method those fabrics in brief channel transistors utilizing flows, toolsets and know the way just like that during Si expertise? How do those fabrics and units behave on the nanoscale? The reader gets a transparent view of what has been performed thus far, what's the cutting-edge and that are the most demanding situations forward ahead of we come any on the subject of a doable Ge and III-V MOS technology.

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Adem, A. Lochtefeld, G. T. Currie, R. T. -R. Lin: IEEE Electron Device Lett. 351 (2003) Q. -S. Goo, J. Pan, B. Yu, S. Ahmed, J. Zhang, and M. -R. Lin, Proc. VLSI Symposium, Kyoto, p. R. H. M. P. S. C. Y. K. Lee, A. M. Shen, G. T. Currie, N. Gerrish, R. Hammond, A. Lochtefeld, F. T. Bulsara, Q. R. T. T. K. C. W. Sun and Frank Wen, Proc. VLSI Symposium, Kyoto, p. -H. -P. -J. -H. M. -Y. -L. -K. C. -Y. -G. -C. -J. -C. -C. Lee, and C. Hu, Int. Electron Devices Meet. Tech. 61 (2003) T. Sanuki, A. Oishi, Y.

Building transistors on this 2 High Current Drivability MOSFET Fabricated on Si(110) Surface 39 alternative Si surface plane provides very effective improvements in ULSI without shrinking of device dimensions. Acknowledgements The authors gratefully acknowledge Professors K. Endo, M. Morita and Dr. K. Arima of Osaka University for STM measurements and discussions. The authors also acknowledge the Ministry of Economy, Trade and Industry and the New Energy and Industrial Technology Development Organization for their financial support.

Subramanian, J. Sudijono, G. Sudo, S. Sun, B. Tessier, Y. Toyoshima, P. Tran, R. Wise, R. Y. H. Wann, L. T. 1 Strained-Si CMOS Technology 70. 71. 72. 73. 74. 19 Su, M. Horstmann, T. Feudel, A. Wei, K. Frohberg, G. Burbach, M. Gerhardt, M. Lenski, R. Stephan, K. Wieczorek, M. Schaller, H. Salz, J. Hohage, H. Ruelke, J. Klais, P. Huebler, S. Luning, R. van Bentum, G. Grasshoff, C. Schwan, E. Ehrichs, S. Goad, J. Buller, S. Krishnan, D. Greenlaw, M. Raab, and N. Kepler, Int. Electron Devices Meet. Tech.

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