By Zied H.A.
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If they are used at frequencies below their normal range of operation, the gain will be higher and may create instabilities. High frequency transistors are built using shallower diffusions, lower collector resistivity, and less emitter ballasting—all the things necessary in device design to achieve greater amplification at higher frequencies. Unfortunately, these are also the opposites of device design to improve the ruggedness of a transistor. Gain and ruggedness at a given frequency are a tradeoff in device design.
Thermal design of the module will take care of internal temperature rises provided the user adheres to FIGURE 1-27 External factors affecting amplifier stability. qxd 11/20/00 3:08 PM Page 28 28 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Short45 Reg46 Radio Frequency Transistors the maximum rating attached to the operating case temperature range. This is an extremely important specification, particularly at the high temperature end, because of two factors.
Figure 1-25 illustrates the frequency and power level relationships that exist in the DIN test. Linear amplifiers aimed at television transmitter applications will generally have another distortion test involving three frequencies. Basically, it is another third order intermodulation test with power levels and frequencies that simulate a TV signal. Relative power levels and frequencies are shown in Figure 1-26. Thermal resistance ratings of CATV modules (as well as power modules described in the next section) are, perhaps, conspicuous by their absence.